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Molecular Sieve Zeolites I by Gould R.F. (ed.)

By Gould R.F. (ed.)

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Barker, H. : Chem. in Britain 1974, 465 14. Balzers, A. : Catalogue of Vaporisation Sources and Pure Metals. Fiirstentum Liechtenstein 15. Catalogue of Vaporisation Sources. Long Beach, California, U. S. : The R. D. Mathis Company 16. Mann, D. , Broida, H. : J. Chem. Phys. 55, 84 (1971) 17. Catalogue of Metal Sources. , Claygate, Esher 18. D'Aniello, M. J. , Barefield, E. : J. OrganometaL Chem. 76, C50 (1974) 19. Burdett, J. , Graham, M. , Turner, J. : J. C. S. Dalton 1972, 1620 and references therein 20.

Five to twenty litre "heavy duty" metal evaporating rotating cryostat (with key design features) for use with resistance or electron beam heating. A Pump out; B glass-metal conical or straight flange seal; C lubricated 0 ring seal (The 0 ring rests in a triangular grove which becomes a vacuum seal when the two parts of the body are screwed together. A contra-rotating locking nut can be interposed between the two parts ensuring stability for rotating in either direction); D pressure gauge; E water cooled radiation shield; F electrical inlets; G crucible, or electron gun; H brass body and rotating sleeve; I ball bearings;!

Although sputtering does not involve the heat energies of thermal vaporisation processes, targets are usually water cooled. F. glow discharge 33) permits the coating of dielectric, insulating or conducting materials. Films of quartz, aluminosilicate, glass, alumina, titanium dioxide, silicon carbide, nichrome, gold and tantalum can be produced by this method. 1). High rates of metal evaporation can be obtained using a Ring Gap Plasmatron 34) as a sputtering source. Typical performance parameters for a high rate planar plasmatron sputtering source are: a discharge voltage of 500 V, a discharge current of 10 A operating at a pressure of 3 x 10- 3 torr.

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