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PDIUSBD11 - USB peripheral with I2C serial interface by Peacock C.

By Peacock C.

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As no irreversible sample changes were expected (or observed) the cause was attributed to changes in experimental conditions between runs. e. the faster the ramp rate the smaller the deviation). In developing the correction methods it is assumed that: i) the baseline shifts seen are due to slight changes in thermal resistance in the system, so that the sign of the correction term is the same, irrespective of whether it is applied to up-ramp or down-ramp data; ii) the baseline shifts observed are small enough so that they do not have a significant effect on the instrument sensitivity.

The thickness and weight of the samples are about 1 mm and 100 mg, respectively. The measured temperature range of the samples is from room temperature up to a maximum of 1794 K. As an example of the experimental results, the measured thermal diffusivity of sample No. 3 is depicted in Figure 2 together with the data of SIMFUEL [1], which simulates high burn-up UO2 chemically by adding soluble FPs. Four runs were repeated while increasing the maximum temperature of measurement. The thermal diffusivity of high burn-up UO2 was lower than half that of unirradiated UO2 at room temperature and the difference between them decreased as temperature increased.

To clarify the cause of thermal diffusivity scatter among the samples, the micro structure of the samples was examined. Extensive columnar grain growth and some metallic FP were observed in sample No. 3, which showed higher thermal diffusivity. On the other hand, columnar grain growth was not observed in sample No. 2. The cross-section of Rod 201, from which the samples are derived, is shown in Figure 5. 6. The power history of Rod 201 is depicted in Figure 6. The rod power was very high (510 W/cm) at the beginning of irradiation, and it decreased almost linearly with burn-up.

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